Materials for the nanoworld - thin-film oxides and embedded nanocrystals for electronic and optical applications
Thin film oxides with a high dielectric constant, such as Al
2 O
3, HfO
2 and ZrO
2, play an essential role in semiconductor research and technology. They are used in almost all microelectronic components. In addition, they are used in various areas of electronics, optoelectronics, energy conversion and storage. In this lecture we report on our efforts to manufacture and optimize such layers for different applications. The focus is on the passivation properties of the oxides for Si photovoltaics [1] and nitride electronics [2] as well as the embedding of Si and Ge nanocrystals for electronic [3] and optical [4] applications.
[1] Schmid, A .; Schröter, Ch .; Otto, R .; Schuster, M .; Klemm, V .; Rafaja, D .; Heitmann, J.,
Appl. Phys. Lett. 106, 053509 (2015)
[2] F. Kersten, A. Schmid, S. Bordihn, JW Müller, J. Heitmann,
Energy Procedia, 38, p. 843, (2013)
[3] D. Lehninger, P. Seidel, M. Geyer, F. Schneider, V. Klemm, D. Rafaja, J. von Borany, J. Heitmann,
Appl. Phys. Lett. 106, 023116 (2015)
[4] Hoffmann, R .; Beyer, J .; Klemm, V., Rafaja, D .; Johnson, BC; McCallum, JC; Heitmann, J .: Erbium-doped slot waveguides containing size-controlled silicon nanocrystals.
J. Appl. Phys. 117, 163106 (2015)
